Lecture
This lecture provides a qualitative description of the behavior of MOSFET transistors, focusing on their structure and operational principles. It begins with an overview of the metal-oxide-semiconductor structure, detailing the materials used, such as silicon and various metals. The instructor explains the formation of the channel under the gate and the importance of the oxide layer in this process. The lecture covers the NMOS structure, including the roles of the source, drain, and substrate, and discusses how voltages applied to the gate influence the formation of the channel. The concept of threshold voltage is introduced, explaining how it affects the transistor's operation. The instructor also addresses the influence of source voltage on the threshold and channel charge, emphasizing the relationship between these parameters. Throughout the lecture, visual aids are used to illustrate the geometric dimensions and electrical characteristics of the MOSFET, providing a comprehensive understanding of its functionality in semiconductor devices.