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Jean-François Carlin

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GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Interface States and Trapping Effects in Al1O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Room temperature polariton lasing in III-nitride microcavities, a comparison with blue GaN-based vertical cavity surface emitting lasers

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime