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Jean-François Carlin

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Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers

Peculiarities in the pressure dependence of photoluminescence in InAlN

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5W/mm Output Power at 40 GHz

GaN-on-insulator technology for high-temperature electronics beyond 400 degrees C

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities