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Jean-Daniel Ganière

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Jean-Daniel Ganière

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Role of Point-Defects in the Silicon Diffusion in Gaas and Al0.3ga0.7as and in the Related Superlattice Disordering

Influence of Al Content in the Barrier on the Optical-Properties of Gaas/Alxga1-Xas(X=0.1-1) Multiple-Quantum-Well Structures

Low‐Temperature EBIC Study of Zn‐Diffused GaAs p‐n Junctions

Luminescence Peculiarities on (Alga)as Single Quantum-Well

Growth and Characterization of Gaalas Gaas and Gainas Inp Structures - the Effect of a Pulse Metalorganic Flow

Thermal-Conversion of N-Type Gaas-Si to P-Type in Excess Arsenic Vapor

Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study

A Model for the Zn Diffusion in Gaas by a Photoluminescence Study

Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

Cathodoluminescence and Electron-Beam Induced Current Study of Hydrogen Treatment of P-N Gaas Junction