There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodimen ...
A data storage device such as a DRAM memory having a plurality of data storage cells 10 is disclosed. Each data storage cell 10 has a physical parameter which varies with time and represents one of two binary logic states. A selection circuit 16, writing c ...
Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...
To perform a current sensing in capacitorless 1-transistor (IT) DRAMs on SOI, we have developed a sensing scheme with automatic reference generation. The reference current is generated by an adjustable current source. The electrical calibration of the refe ...