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A data storage device such as a DRAM memory having a plurality of data storage cells 10 is disclosed. Each data storage cell 10 has a physical parameter which varies with time and represents one of two binary logic states. A selection circuit 16, writing c ...
2007
A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...
2004
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodimen ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
2003
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To perform a current sensing in capacitorless 1-transistor (IT) DRAMs on SOI, we have developed a sensing scheme with automatic reference generation. The reference current is generated by an adjustable current source. The electrical calibration of the refe ...
2006
A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...
2004
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
2003
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...
Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...
