Alok Rudra

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Related publications (84)

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Victor Carle Adrien Boureau

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

WILEY-V C H VERLAG GMBH2025

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

2025

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Anna Fontcuberta i Morral, Alok Rudra, Valerio Piazza, Michele Zendrini

This dataset corresponds to the following manuscript: Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engi ...

Zenodo2024

Control of Ge island coalescence for the formation of nanowires on silicon

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Michele Zendrini

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

American Chemical Society (ACS)2024

Spatial Avoided Crossing in Optical Emission of Site-Controlled Pyramidal Quantum Dots in Photonic Crystal Cavities

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

Interactions of site-controlled quantum dots with a high-order cavity mode of an L7-type photonic crystal cavity are resolved spatially and spectrally. We observed a spatial avoided crossing in polarization-resolved optical emission of quantum dots. ...

Institute of Electrical and Electronics Engineers Inc.2024

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii, Sara Marti Sanchez

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Site-controlled QD embedded coupled photonic crystal cavity waveguides for on-chip photon routing

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

We demonstrate the on-chip photon routing on a site-controlled quantum dots embedded W1 photonic crystal waveguides side coupled to a L3 cavity. Observed photon propagation through the device indicates the connectivity of all photonic elements. ...

Optical Society of America2023

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

Precise positioning of single site-controlled inverted pyramidal InGaAs quantum dots (QDs) at the antinode of a GaAs photonic crystal cavity with nanometer-scale accuracy holds unique advantages compared to self-assembled QDs and offers great promise for p ...

Aip Publishing2023

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Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Anna Fontcuberta i Morral, Alok Rudra, Valerio Piazza, Michele Zendrini

Zenodo2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Michele Zendrini

American Chemical Society (ACS)2024

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

Aip Publishing2023