Anna Fontcuberta i Morral

Biography

2014 Associate Professor at the Institut des Matériaux, EPFL

2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL

2009 Habilitation in Physics, Technische Universität München

2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France)

2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells)

2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France

2001-2002 Postdoctoral Scholar at the California Institute of Technology

Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications

Sponsor: Professor Harry A. Atwater

1998-2001 PhD in Materials Science, Ecole Polytechnique

Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors

Advisor: Pere Roca i Cabarrocas

1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France .

1993-1997 BA in Physics at Universitat de Barcelona

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Ce cours a comme objectif de présenter les concepts nécessaires à la compréhension des principes fondamentaux qui permettent de prédire les propriétés d'un matériau. Ces concepts vous permettront de réaliser du "material design" et de comprendre même des nouveaux matériaux pas encore étudiés.

This is an interactive course explaining the main physical and chemical concepts to understand epitaxy of crystalline thin films and what determines the morphology, composition and structure of a material grown per epitaxy both in the bulk and as nanostructure.

Courses taught by this person

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Related publications (204)

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From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Didem Dede, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Valerio Piazza, Alok Rudra, Marie Sophie Sanglé-Ferrière

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. Selective area epitaxy at the nanoscale enables fabricationofhigh-quality nanostructures in regular arrays with predefined geometry.Here, we investigate the growth mechanisms of GaAs nanoridges on GaAs(100) substrates in selective area trenches by metal-organicvapor-phase epitaxy (MOVPE). It is found that pre-growth annealingresults in the formation of valley-like structures of GaAs with atomicterraces inside the trenches. MOVPE growth of GaAs nanoridges consistsof three distinct stages. Filling the trench in the first stage exhibitsa step-flow growth behavior. Once the structure grows above the masksurface, it enters the second stage of growth by forming {101} sidefacets as the (100) flat top facet progressively shrinks. In the thirdstage, the fully formed nanoridge begins to overgrow onto the maskwith a significantly reduced growth rate. We develop a kinetic modelthat accurately describes the width-dependent evolution of the nanoridgemorphology through all three stages. MOVPE growth of fully formednanoridges takes only about 1 min, which is 60 times faster than inour set of molecular beam epitaxy (MBE) experiments reported recently,and with a more regular, triangular cross-sectional geometry definedsolely by the {101} facets. In contrast to MBE, no material loss dueto Ga adatom diffusion onto the mask surface is observed in MOVPEuntil the third stage of growth. These results are useful for thefabrication of GaAs nanoridges of different dimensions on the samesubstrate for various applications and can be extended to other materialsystems.

AMER CHEMICAL SOC2023

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Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm x 1.1 mu m x 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W-1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 mu m wavelengths (0.12 eV) at 77 K.

ROYAL SOC CHEMISTRY2023

The 2022 applied physics by pioneering women: a roadmap

Anna Fontcuberta i Morral, Hyunjung Kim

Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable environment in which women can thrive. This Roadmap on Women in Applied Physics, written by women scientists and engineers, is intended to celebrate women's accomplishments, highlight established and early career researchers enlarging the boundaries in their respective fields, and promote increased visibility for the impact women have on applied physics research. Perspectives cover the topics of plasma materials processing and propulsion, super-resolution microscopy, bioelectronics, spintronics, superconducting quantum interference device technology, quantum materials, 2D materials, catalysis and surface science, fuel cells, batteries, photovoltaics, neuromorphic computing and devices, nanophotonics and nanophononics, and nanomagnetism. Our intent is to inspire more women to enter these fields and encourage an atmosphere of inclusion within the scientific community.

IOP Publishing Ltd2023