Person
Jean-Michel Sallese
Related publications (131)
Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry
Jean-Michel Sallese, Didier Bouvet, Georgi Gorine, Federico Ravotti
The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...
AMER INST PHYSICS2019Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh
In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...
2019Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET
Jean-Michel Sallese, Christophe Lallement
The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance a ...
2019Charge-Based EPFL HEMT Model
Jean-Michel Sallese, Farzan Jazaeri
This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019Transient current technique for charged traps detection in silicon bonded interfaces
Jean-Michel Sallese, Alessandro Mapelli, Didier Bouvet
Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, microelectromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabri ...
2019Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements
Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino
Recently a new technique based on capacitive sensing has been developed and used to estimate the amount of moisture in polymers by means of the deviation of the dielectric constant. This technique is expected to be used for in-line monitoring of aggregate ...
IEEE2019CJM: A Compact Model for Double-Gate Junction FETs
Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019FOSS EKV2.6 Verilog-A Compact MOSFET Model
Christian Enz, Jean-Michel Sallese, Wladyslaw Grabinski, Eric Vittoz, François Krummenacher, Matthias Bucher, Christophe Lallement
The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...
IEEE2019A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics
Jean-Michel Sallese, Farzan Jazaeri, Seyed Armin Tajalli, Arnout Lodewijk M Beckers
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...
IEEE2019Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics
Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi
We present a lumped devices network approach to simulate surface recombination effects in optoelectronics devices. The network is composed of generalized lumped devices where the excess carrier concentrations and gradients are mapped on electrical quantiti ...
IEEE2018