Person
Raphaël Butté
Related publications (129)
Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang
Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...
Bristol2024Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...
AIP Publishing2023Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann
c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...
AMER INST PHYSICS2021Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...
AMER CHEMICAL SOC2021Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Joachim Armand Simonne Ciers, Davide Maria Di Paola
Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...
NATURE RESEARCH2021Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Nicolas Grandjean, Raphaël Butté, Johann Nicolaï Stachurski, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann, Kanako Shojiki
Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...
AMER CHEMICAL SOC2020Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Camille Haller, Thomas Fjord Kjaersgaard Weatherley
We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...
AMER INST PHYSICS2020III-nitride photonic cavities
Nicolas Grandjean, Raphaël Butté
Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...
WALTER DE GRUYTER GMBH2020Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...
IOP PUBLISHING LTD2020Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...
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