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Marcus Gonschorek

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Marcus Gonschorek

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Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

High-speed and low-noise AlInN/GaN HEMTs on SiC

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier