Publications by Jelena Ristic | EPFL Graph Search

Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Laurent Balet, Pierre Michel Corfdir, Jelena Ristic, Samuel Sonderegger

Cambridge, Cambridge University Press2010

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Jelena Ristic

A detailed study of excitons in unstrained GaN nanocolumns grown by plasma assisted molecular beam epitaxy on silicon substrates is presented. The time-integrated and time-resolved photoluminescence spectra do not depend significantly on the (111) or (001) ...

American Institute of Physics2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jacques Levrat, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir, Tiankai Zhu, Jelena Ristic

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Jelena Ristic

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir, Tiankai Zhu, Jelena Ristic

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Jelena Ristic

A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...

2008