Publications by Michele De Marchi

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Maxime Victor Thammasack, Tsung-Han Lin, David Baudouin

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack, Marios Barlas

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

Institute of Electrical and Electronics Engineers2016

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors

Giovanni De Micheli, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) t ...

2015

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014

Nanowire systems: technology and design (invited paper)

Giovanni De Micheli, Davide Sacchetto, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon, Shashi Kanth Bobba, Michele De Marchi

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Giovanni De Micheli, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA ...

2014

Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

Polarity-Controllable Silicon Nanowire Transistors with Dual Threshold Voltages

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential fo ...

Institute of Electrical and Electronics Engineers2014

Ambipolar silicon nanowire field effect transistor

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi

This invention describes a novel electronic device consisting of one-or more-vertically stacked gate-all-around silicon nanowire field effect transistor (SNWFET) with two independent gate electrodes. One of the two gate electrodes, acting on the central se ...

2013