Skip to main content

Search

Show all results for

Home

Person

Jury Sandrini

This person is no longer with EPFL

About
Privacy
Disclaimer

Copyright © 2025 EPFL, all rights reserved

Graph Chatbot

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications (12)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Giovanni De Micheli, Davide Sacchetto, Jury Sandrini, Pierre-Emmanuel Julien Marc Gaillardon

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Electrochemical Society2017