Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Etienne François Olivier Giraud, Marcus Gonschorek
GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profile ...
Amer Inst Physics2012