Munehito Kagaya

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Munehito Kagaya

Introducing the CTA concept

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Introducing the CTA concept

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate