Martin Heiss

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Related publications (35)

Enhancement of Second Harmonic Signal in Nanofabricated Cones

Anna Fontcuberta i Morral, Aleksandra Radenovic, Andrea Lovera, Oriol López Sánchez, Fabrizia Dutto, Martin Heiss

Geometrical effects in optical nanostructures on nanoscale can lead to interesting phenomena such as inhibition of spontaneous emission,(1,2) high-reflecting omnidirectional mirrors, structures that exhibit low-loss-waveguiding,(3) and light confinement.(4 ...

2013

Self-assembled quantum dots in a nanowire system for quantum photonics

Anna Fontcuberta i Morral, Nicola Marzari, Marco Cantoni, Martin Heiss, Sonia Conesa Boj, Eleonora Russo, Yannik Fontana, Bernt Ketterer

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Martin Heiss, Esther Alarcon Llado, Gözde Tütüncüoglu, Eleonora Russo, Sonia Conesa Boj, Anna Dalmau Mallorquí, Ignasi Canales Mundet

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Sylvain Dunand, Daniel Rüffer, Martin Heiss, Eleonora Russo, Sonia Conesa Boj

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Royal Society of Chemistry2013

Semiconductor nanowires for efficient, sustainable solar energy harvesting

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí

SPIE-Intl Soc Optical Eng2013

Electrical transport in C-doped GaAs nanowires: surface effects

Anna Fontcuberta i Morral, Esther Alarcon Llado, Eleonora Russo, Alberto Casadei, Martin Heiss, Fauzia Jabeen, Jil Schwender, Mohammad Ramezani

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pi ...

Wiley-Blackwell2013

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Anna Fontcuberta i Morral, Alberto Casadei, Martin Heiss, Carlo Colombo

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

American Institute of Physics2013

Single-nanowire solar cells beyond the Shockley-Queisser limit

Anna Fontcuberta i Morral, Martin Heiss

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queiss ...

Nature Publishing Group2013

Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli

We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

American Physical Society (APS)2013

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Carlo Colombo, Pierre Loïc Blanc

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Inderscience2013

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Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Carlo Colombo, Pierre Loïc Blanc

Inderscience2013