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Tomas Sluka

Related publications (26)

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Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals

Nava Setter, Tomas Sluka, Xiankui Wei

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was trea ...

Nature Publishing Group2016

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Nava Setter, Tomas Sluka, Silviu Cosmin Sandu, Arnaud Robert André Crassous

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

Taylor & Francis2015

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Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Amer Physical Soc2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Formation of charged ferroelectric domain walls with controlled periodicity

Nava Setter, Alexander Tagantsev, Dragan Damjanovic, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

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Ferroelectrics are widespread in technology(1), being used in electronics and communications(2), medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired(3-5). Recent developm ...

Nature Publishing Group2015

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Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

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In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

Nature Publishing Group2014

The present invention relates to a device including a ferroic material having a ferroelectric order parameter and including at least two domains, as well as a first and second electrode in electrical contact with the ferroic material. The device is configu ...

2014

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Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domai ...

Nature Publishing Group2013