Tomas Sluka

Publications associées (25)

À propos
Confidentialité
Mentions légales

Graph Chatbot

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Nava Setter, Tomas Sluka, Silviu Cosmin Sandu, Arnaud Robert André Crassous

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

Taylor & Francis2015

Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)

Nava Setter, Alexander Tagantsev, Tomas Sluka, Maxim Gureev, Petr Yudin

Amer Physical Soc2015

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Tomas Sluka, Enrico Colla, Petr Yudin, Ludwig Feigl, Konstantin Shapovalov, Xiankui Wei, Arnaud Robert André Crassous

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Negative-pressure-induced enhancement in a freestanding ferroelectric

Nava Setter, Alexander Tagantsev, Marco Cantoni, Tomas Sluka, Alexander Kvasov, Silviu Cosmin Sandu, Jin Wang, Xiankui Wei, Brahim Dkhil

Ferroelectrics are widespread in technology(1), being used in electronics and communications(2), medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired(3-5). Recent developm ...

Nature Publishing Group2015

Anomalously thick domain walls in ferroelectrics

Nava Setter, Alexander Tagantsev, Tomas Sluka, Maxim Gureev, Petr Yudin

Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Amer Physical Soc2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Formation of charged ferroelectric domain walls with controlled periodicity

Nava Setter, Dragan Damjanovic, Alexander Tagantsev, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

Adaptive Vibration Suppression System: An Iterative Control Law for a Piezoelectric Actuator Shunted by a Negative Capacitor (vol 59, pg 2785, 2012)

Tomas Sluka, Pavel Mokry

Ieee-Inst Electrical Electronics Engineers Inc2014

Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics

Alexander Tagantsev, Tomas Sluka

The present invention relates to a device including a ferroic material having a ferroelectric order parameter and including at least two domains, as well as a first and second electrode in electrical contact with the ferroic material. The device is configu ...

2014

Page 2 sur 3

Adaptive Vibration Suppression System: An Iterative Control Law for a Piezoelectric Actuator Shunted by a Negative Capacitor (vol 59, pg 2785, 2012)

Tomas Sluka, Pavel Mokry

Ieee-Inst Electrical Electronics Engineers Inc2014