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Piezoelectric wurtzite ScxAl1-xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffra ...
The transverse piezoelectric coefficient e31,f of Al1-xScxN thin films was investigated as a function of composition. It increased nearly 50% from x = 0 to x = 0.17. As the increase of the dielectric constant was only moderate, these films are very suitabl ...
AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors k(t)(2) obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy targe ...
