Ramin Matloub Aghdam

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Related publications (13)

Growth and properties of AlScN thin films for microwave transducers and piezoelectric energy harvesting

Ramin Matloub Aghdam

EPFL2014

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

Paul Muralt, Ramin Matloub Aghdam

Piezoelectric wurtzite ScxAl1-xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffra ...

American Institute of Physics2012

Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators

Paul Muralt, Evgeny Milyutin, Ramin Matloub Aghdam, Silviu Cosmin Sandu, Alvaro Artieda

AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors k(t)(2) obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy targe ...

AIP American Institute of Physics2011

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