Publications by Lucian Barbut | EPFL Graph Search

Junctionless Transistors : Challenges and Opportunities in Fabrication and Characterization

EPFL2014

Trans-Capacitance Modeling in Junctionless Gate-All-Around Nanowire FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this letter, we derive an analytical model for trans-capacitances in Junctionless Nanowire Field Effect Transistors (JL NW FET). As for static operation, we show that a complete small signal capacitance network can be built upon an equivalence scheme re ...

Elsevier2014

Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

This paper aims to model asymmetric operation in double gate junctionless FETs. Following a rigorous approach, we find that asymmetric operation can be simulated by combining two symmetric junctionless FETs, what we call the virtual symmetric device concep ...

Institute of Electrical and Electronics Engineers2014

Generalized Charge Based Model of Double Gate Junctionless FETs Including Inversion

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this brief, we have developed a charge-based model for the symmetric double gate junctionless FET that also accounts for the inversion layer when the gate voltage is biased in deep depletion. Basically, this approach represents a generalization of a for ...

Institute of Electrical and Electronics Engineers2014

Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...

Institute of Electrical and Electronics Engineers2014

Transient Off-Current in Junctionless FETs

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless fieldeffect transistors. This effect might be attributed to a process involving generati ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Jean-Michel Sallese, Farzan Jazaeri, Adil Koukab, Lucian Barbut

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along ...

Elsevier2013

Design Space of Twin Gate Junctionless Vertical Slit Field Effect Transistors

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

In this work, we present the technological constrains and limitations in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space involving the intrinsic off-current, the sub-threshold swing, and the drai ...

2013

Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier l ...

2013

Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. Acco ...

Institute of Electrical and Electronics Engineers2013