Publications by Georg Rossbach

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Christian Mounir

We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density (similar to 10(11) cm(-2)), the carrier ...

2019

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach, Marlene Glauser, Gordon Jens Callsen, Lise Lahourcade

AIP American Institute of Physics2018

Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence

Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach

AIP American Institute of Physics2018

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Lise Lahourcade, Mehran Shahmohammadi

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Amer Physical Soc2017

Biexcitonic molecules survive excitons at the Mott transition

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Raphaël Butté, Jacques Levrat, Eric Feltin, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Georg Rossbach, Mehran Shahmohammadi

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

High-Density Excitonic Effects in GaN : Mott-Transition and Polariton Lasing

Georg Rossbach

EPFL2014

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Georg Rossbach, Marlene Glauser, Christian Mounir

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Eric Feltin, Georg Rossbach

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

Amer Physical Soc2013