Publications by Farzan Jazaeri

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Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Farzan Jazaeri, Parnian Ferdowsi, Michael Saliba

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the quasi-neutral regions of a perovskite solar cell. Here, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

IEEE2022

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...

IEEE2021

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Farzan Jazaeri

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The model includes explicit expressions, taking into account the first-order perturb ...

PERGAMON-ELSEVIER SCIENCE LTD2021

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Inflection Phenomenon in Cryogenic MOSFET Behavior

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

2020

Farzan Jazaeri

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Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

High-Temperature HEMT Mode

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Study of Donor-like Surface Trap Emission in GaN HEMTs

Transcapacitances in EPFL HEMT Model

Inflection Phenomenon in Cryogenic MOSFET Behavior

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

High-Temperature HEMT Mode

Study of Donor-like Surface Trap Emission in GaN HEMTs

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Transcapacitances in EPFL HEMT Model

Inflection Phenomenon in Cryogenic MOSFET Behavior