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Farzan Jazaeri

Related publications (72)

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Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...

2019

Cryogenic MOSFET Threshold Voltage Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson’s equation including bandgap widening, intrinsic carrier-density scaling, ...

IEEE2019

CJM: A Compact Model for Double-Gate Junction FETs

Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

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Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers, Louis Hutin

In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device-phys ...

2018

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This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer char ...

2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta, Louis Hutin

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018