Person
Vincent Philippe Paratte
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Related publications (7)
Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.
Integration of thin n-type nc-Si:H layers in the window-multilayer stack of heterojunction solar cells
Christophe Ballif, Laurie-Lou Senaud, Mathieu Gérard Boccard, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Corentin Yann Sthioul
N-type nanocrystalline silicon (nc-Si:H(n)) layers are good candidates to improve current and transport properties in heterojunction solar cells. In this work, we perform thickness series alongside PH3 doping series to unravel the desirable characteristics ...
ELSEVIER2022Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells
Christophe Ballif, Quentin Thomas Jeangros, Laurie-Lou Senaud, Mathieu Gérard Boccard, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Mario Joe Lehmann, Vincent Philippe Paratte
Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We invest ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021ZnSnxGe1-xN2 as electron-selective contact for silicon heterojunction solar cells
Christophe Ballif, Jonathan Emanuel Thomet, Julien Hurni, Mathieu Gérard Boccard, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Davi Marcelo Fébba
This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity ...
IEEE2021