Publications by Jelena Vukajlovic Plestina

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Anna Fontcuberta i Morral, Wonjong Kim, Jelena Vukajlovic Plestina

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

2020

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Anna Fontcuberta i Morral, William Craig Carter, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Lea Ghisalberti

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

2019

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii, Jelena Vukajlovic Plestina

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Anna Fontcuberta i Morral, Heidi Andrea Potts, Luca Francaviglia, Jelena Vukajlovic Plestina, Francesca Amaduzzi

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Institute of Physics2017

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Maxime Lagier, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Jelena Vukajlovic Plestina

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Dmitry Mikulik, William Craig Carter, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Jelena Vukajlovic Plestina

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

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