Dmitry Ovchinnikov

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Related publications (15)

Non equilibrium anisotropic excitons in atomically thin ReS2

Andras Kis, Andrei Kucharavy, Alessandro Surrente, Dmitry Ovchinnikov

We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transit ...

IOP PUBLISHING LTD2019

Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

Andras Kis, Ming-Wei Chen, Olivier Renault, Dmitry Ovchinnikov, Hokwon Kim

2018

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

Andras Kis, Alberto Ciarrocchi, Dmitry Ovchinnikov, Ahmet Avsar

Nature Research2018

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Yen-Cheng Kung, Daniele Vella, Dragan Mihailovic

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Dmitry Ovchinnikov, Sajedeh Manzeli, Diego José Pasquier

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Influence of structural and electrostatic disorder on transport properties of monolayers of two-dimensional semiconductors

Dmitry Ovchinnikov

Two-dimensional (2D) materials are under intensive investigation recently due to variety of electronic properties, ranging from insulators (h-BN) to semi-metals (graphene), semiconductors (MoS2, WSe2) with wide variability of band-gap and correlated phases ...

EPFL2017

Highly Oriented Atomically Thin Ambipolar MoSe2

Andras Kis, Philippe Gillet, Dmitry Ovchinnikov, Oleg Yazyev, Ming-Wei Chen, Oriol López Sánchez, Alessandro Surrente, Michele Pizzochero

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large ...

American Chemical Society2017

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

Andras Kis, Dmitry Ovchinnikov, Dmitrii Unuchek, Hokwon Kim, Davide Deiana

Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...

American Chemical Society (ACS)2017

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

Andras Kis, Oriol López Sánchez, Dmitry Ovchinnikov, Adrien Victor Allain, Shikhar Misra

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devic ...

American Chemical Society (ACS)2016

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Andras Kis, Oleg Yazyev, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Victor Allain, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

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Influence of structural and electrostatic disorder on transport properties of monolayers of two-dimensional semiconductors

Dmitry Ovchinnikov

EPFL2017