Publications by Francesca Amaduzzi

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Francesca Amaduzzi

Optical-pump terahertz-prohe (OPTP) spectroscopy is a powerful, non-contact tool for extracting the electrical conductivity within a material. In this work, we show how OPTP spectroscopy can he used to extract the temperature-dependent electron mobility an ...

IEEE2019

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Anna Fontcuberta i Morral, Heidi Andrea Potts, Francesca Amaduzzi

American Chemical Society (ACS)2018

Investigations of doping via optical pump terahertz-probe spectroscopy

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Francesca Amaduzzi

Reliable doping in semiconductor nanowires is essential for the development of novel optoelectronic devices. Dopant incorporation within the nanowire can allow for optimisation of key optoelectronic properties, such as electron mobility and carrier lifetim ...

IEEE Computer [email protected]2017

Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Francesca Amaduzzi, Alessandro Surrente, Philippe Leroux

III-V nanosttuctures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of mol ...

American Chemical Society2017

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Anna Fontcuberta i Morral, Heidi Andrea Potts, Luca Francaviglia, Francesca Amaduzzi, Jelena Vukajlovic Plestina

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Institute of Physics2017

Functional properties of III-V nanowires addressed by Raman spectroscopy

Francesca Amaduzzi

In recent years, semiconductor nanowires have attracted considerable attention as a result of their unique properties and potential applications in many fields. In particular, they can be very attractive materials for certain optoelectronic and electronic ...

EPFL2017

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Gözde Tütüncüoglu, Emanuele Uccelli, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Esther Alarcon Llado, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016