Publications by Adrien Victor Allain

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Andras Kis, Oleg Yazyev, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Victor Allain, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

Andras Kis, Oriol López Sánchez, Dmitry Ovchinnikov, Adrien Victor Allain, Shikhar Misra

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devic ...

American Chemical Society (ACS)2016

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Andras Kis, Sajedeh Manzeli, Adrien Victor Allain

Continuous tuning of material properties is highly desirable for a wide range of applications, with strain engineering being an interesting way of achieving it. The tuning range, however, is limited in conventional bulk materials that can suffer from plast ...

American Chemical Society (ACS)2015

Thickness-dependent mobility in two-dimensional MoS2

Andras Kis, Adrien Victor Allain, Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Royal Soc Chemistry2015

Electrical contacts to two-dimensional semiconductors

Andras Kis, Adrien Victor Allain

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as wel ...

Nature Publishing Group2015

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

Electrical Transport Properties of Single-Layer WS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Adrien Victor Allain

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment a ...

Amer Chemical Soc2014