Person

Bin Lu

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Related publications (8)

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Secure numerical and logical multi party operations

Bin Lu

We derive algorithms for efficient secure numerical and logical operations in the semi-honest model ensuring statistical or perfect security for secure multi-party computation (MPC). To derive our algorithms for trigonometric functions, we use basic mathem ...

Elsevier Science Bv2017

Subdomain and Access Pattern Privacy Trading off Confidentiality and Performance

Bin Lu, Thomas Locher, Matus Harvan

Homomorphic encryption and secure multi-party computation enable computations on encrypted data. However, both techniques suffer from a large performance overhead. While advances in algorithms might reduce the overhead, we show that achieving perfect (or e ...

Scitepress2016

Advanced power electronic devices based on Gallium Nitride (GaN)

Elison de Nazareth Matioli, Bin Lu, Feng Gao

It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to signifi ...

IEEE2015

Measuring and Controlling Energy Consumption of Sensor networks

Bin Lu

A wireless sensor network (WSN) is built of two types of nodes: regular sensor nodes and base stations. The regular sensor nodes monitor physical or environmental conditions, such as temperature, sound, pressure, etc. and cooperatively pass their data thro ...

2014

Nitride-based electron devices for high-power/high-frequency applications

Elison de Nazareth Matioli, Bin Lu

Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed ...

Oxford University Press2013

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

Elison de Nazareth Matioli, Bin Lu

We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact directly to the 2-D electron gas (2-DEG) at the sidewalls of ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Tri-Gate Normally-Off GaN Power MISFET

Elison de Nazareth Matioli, Bin Lu

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Low Leakage Normally-off Tri-gate GaN MISFET

Elison de Nazareth Matioli, Bin Lu

A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-stat ...

Ieee2012