Publications by José Luis Padilla de la Torre

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

2018

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

2018

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

AIP American Institute of Physics2018

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Mihai Adrian Ionescu, José Luis Padilla de la Torre

Among the different types of bilayer tunneling field-effect transistors exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the utilization of InAs/GaSb channels proves to be an appealing means to e ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogous ...

Amer Inst Physics2016

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gat ...

Ieee2016

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, S ...

Institute of Electrical and Electronics Engineers2016

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

Elsevier2015

On the MIMO Capacity for Distributed System under Composite Rayleigh/Rician Fading and Shadowing

José Luis Padilla de la Torre

Wireless channels are commonly affected by short-term fading and long-term fading (shadowing). The shadowing effects must be taken into account also when mobility is present in the wireless scenario. Using a composite fading model, the total channel capaci ...

Hindawi Publishing Corporation2015