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Behnoush Attarimashalkoubeh

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Related publications (5)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

2017

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Ieee2016