Person

Andrea Giunto

Related publications (8)

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Mirjana Dimitrievska, Iléane Tiphaine Françoise Marie Lefevre

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the generalpublic and light detection and ranging (LiDAR) sensors have emerged as the preferred solution forcar vision systems. At present, LiDAR technologies employ exp ...

EPFL2023

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Anna Fontcuberta i Morral, Alok Rudra, Andrea Giunto, Santhanu Panikar Ramanandan, Nicholas Paul Morgan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

2022

THz characterization of GeSn monocrystalline thin films

Anna Fontcuberta i Morral, Andrea Giunto, Nicolas Philippe Laurent Humblot

The employment of other group IV materials, such as alloys of germanium and tin, poses a solution for overcoming the efficiency limit of silicon that arises from its indirect bandgap. By using THz spectroscopy, the optoelectronic properties, such as conduc ...

IEEE2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Andrea Giunto, Santhanu Panikar Ramanandan, Nicholas Paul Morgan

This document contains all the raw data files used for the manuscript. ...

EPFL Infoscience2022

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We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen dilution in ...

IEEE2020

Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation

Anna Fontcuberta i Morral, Andrea Giunto

A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without the need of a Smart-cut type of process, e.g. without the need of ion implantation. ...

2019

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