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Hironori Okumura

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Related publications (2)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Nicolas Grandjean, Denis Martin, Hironori Okumura

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

Amer Inst Physics2016