Publications by Cecilia Giovinazzo

Switching Kinetics Control of W-Based ReRAM Cells in Transient Operation by Interface Engineering

Thomas La Grange, Yusuf Leblebici, Mahmoud Hadad, Carlo Ricciardi, Cecilia Giovinazzo, Miguel Ramos

Tungsten (W) is one of the most promising materials to be used in resistive random-access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power c ...

WILEY2019

Multi-ReRAM synapses for artificial neural network training

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Irem Boybat Kara, Carlo Ricciardi, Cecilia Giovinazzo, Evangelos Eleftheriou, Abu Sebastian

Metal-oxide-based resistive memory devices (ReRAM) are being actively researched as synaptic elements of neuromorphic co-processors for training deep neural networks (DNNs). However, device-level non-idealities are posing significant challenges. In this wo ...

IEEE2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018