Publications by Akshay Balgarkashi

Synthesis and properties of heterostructures in nanowires and 2-D materials

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

EPFL2022

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Mitali Banerjee, Akshay Balgarkashi

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

IOP Publishing Ltd2022

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Anna Fontcuberta i Morral, Didem Dede, Jean-Baptiste Leran, Wonjong Kim, Nicholas Paul Morgan, Lea Ghisalberti, William Craig Carter, Akshay Balgarkashi

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

Zenodo2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Raphaël François Lemerle, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Anna Fontcuberta i Morral, Didem Dede, Jean-Baptiste Leran, Wonjong Kim, Nicholas Paul Morgan, Lea Ghisalberti, Akshay Balgarkashi

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Wonjong Kim, Mirjana Dimitrievska, Akshay Balgarkashi

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Akshay Balgarkashi

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi

Raw dataset and image files used for the publication ...

2020