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Amin Rassekh

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Related publications (5)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Design space of quantum dot spin qubits

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the electrochemical potentials of each quantum dot. Quantum dots offer high levels of reliability and scal ...

ELSEVIER2023

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Mihai Adrian Ionescu, Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020