Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam
Related publications (33)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
This work discusses the temperature behavior of the various photoluminescence (PL) transitions observed in undoped, n- and p-doped GaN in the 9-300 K range. Samples grown using different techniques have been assessed. When possible, simple rate equations a ...
Photoelectrochem. measurements have been performed on film electrodes consisting of linked nano-sized TiO2 colloids. The film thickness ranged from 1-40 μm. The film network was attached to a thin transparent conducting layer of SnO2 allowing for photogene ...
