Correlated growth in ultrathin pentacene films on silicon oxide: effect of deposition rate
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The vacuum deposition of complex functional molecules and nanoparticles by thermal sublimation is often hindered due to their extremely low vapor pressure. This especially impedes the application of ultrahigh vacuum (UHV) based analytical and surface modif ...
Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films ...
DC reactive magnetron sputtering was used for the deposition of Zr–Si–N thin films. Four series of samples have been deposited at various substrate temperatures TS: 300 K, 510 K, 710 K and 910 K. Depending on TS, different N2 partial pressures pN2 were req ...
Focused Electron Beam Induced Deposition (FEBID) is a rapid prototyping technique for the investigation, production and modification of 2 and 3-D nanostructures. The process takes place at room temperature, in the high-vacuum chamber of a Scanning Electron ...
Large area plasma-enhanced chemical vapor deposition of thin films such as silicon nitride or amorphous silicon is widely used for thin film transistor fabrication in the flat panel display industry. A numerical three-dimensional model to calculate the dep ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
A comprehensive model for the electronic transport in polycrystalline ZnO:B thin films grown by low pressure chemical vapor deposition is presented. The optical mobilities and carrier concentration calculated from reflectance spectra using the Drude model ...
Strontium barium niobate (SrxBa1-xNb2O6, shortly SBN) is a solid solution system with tetragonal tungsten bronze crystal structure. It exhibits a ferroelectric phase with only one polar axis and a transition temperature depending on the Sr/Ba ratio. This t ...
Organic FET transistors (OFETs) were fabricated on silicon substrates using pentacene as active organic layer and gold source and drain contacts. OFETs were used as test structures in order to study carriers photogeneration effect in organic layers. Photog ...
The performance and charge transport characteristics of pentacene transistors with oxide gates such as SiO2 and Al2O3 have been recently shown to largely depend on the density of residual carriers due to electron acceptor defects at the oxide surface. The ...
