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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
With the work reported in this manuscript we have essentially contributed to the electrical characterization and modelling of high voltage MOSFETs, more particularly DMOS architectures such as X-DMOS and L-DMOS able to sustain voltages ranging from 30V to ...
The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...
We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...
As the geometries of the transistors reach the physical limits of operation, one of the main design challenges of Systems-on-Chips (SoCs) will be to provide dynamic (run-time) support against permanent and intermittent faults that can occur in the system. ...
This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
Using a delta-doped GaAs/AlGaAs heterostructure with a 10 nm spacer layer, we exploit the metastable nature of the DX centers at low temperatures to control electrostatically their net frozen charge density. The concentration of DX(-) centers at 77 K is on ...
This paper presents a new and simple compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects. This is done without any additional assumption or simplification than th ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
