Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells
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We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...
Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less than ...
We use a rate equation model in order to reproduce the dynamics of two-dimensional excitons and free carriers in a time resolved photoluminescence experiment. We investigate the dynamics of the exciton formation from free electron-hole pairs, and the evolu ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phono ...
We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only start ...
The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied ...
Quantum wire heterostructures, such as V- and T-shaped wires, are very promising candidates for low-threshold lasing. A crucial issue is the excitonic vs. free-carrier nature of the radiative recombination. Here, we report on magnetophotoluminescence studi ...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/Al0.3Ga0.7As superlattices (SL's) having randomly distributed well widths are studied. Our results indicate that the electronic properties of disordered SL' ...