Measurements of the Diffusion Length in Gaas/Algaas Quantum-Well (Qw) Structures by Cathodoluminescence - Comparison of the Bulk and Qw Diffusion Channels
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were ...
We present an investigation of the optical gain and its saturation of the electron-hole plasma confined in GaAs/(Ga,Al)As quantum wells. For such investigations the variable stripe length method is a simple but quite powerful tool. The spacial longitudinal ...
A procedure for calculating the resonance width of a state degenerate with a continuum is proposed. It is based on a diagonalization of the Hamiltonian on a finite variational basis followed by application of the Fano theory on the resulting eigenstates. T ...
Type II double barrier AlxGa1-xAs/AlAs/GaAs quantum wells with ultra-thin AlAs layers (1 or 2 monolayers (ML) wide) have been studied by photoluminescence as a function of the substrate misorientation. A blue shift of the recombination lines is observed wh ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
