Characterization of Lattice-Matched Single In1-Xgaxasyp1-Y Quantum-Wells Grown by Conventional Liquid-Phase Epitaxy

In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88Ga0.12As0.26 p0.74 (lambda(g) = 1.05 mum). Low-temperature photoluminescence was employed to prove the samples capable of displaying quantum size effects. Energy upshifts up to 125 meV were measured for InP-clad quantum wells of about 50 angstrom thickness. All multilayered stacks originate from step-cooling growth cycles in an ordinary linear slider boat. Streamlining of the experimental conditions has led to a conspicuous decrease in the FWHM values of the blueshift signals.