Publication
Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
Andras Kis, Dumitru Dumcenco, Olivier Renault, Dmitrii Unuchek, Hokwon Kim, Nicolas Chevalier