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We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm(2) are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm(-1).
Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman
Tobias Kippenberg, Rui Ning Wang, Guanhao Huang, Yujia Yang, Junqiu Liu, Arslan Sajid Raja, Jiahe Pan