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The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.
Andras Kis, Dumitru Dumcenco, Olivier Renault, Dmitrii Unuchek, Hokwon Kim, Nicolas Chevalier
Thomas Fjord Kjaersgaard Weatherley
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