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Publication
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The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.
Thomas Fjord Kjaersgaard Weatherley
Kevin Sivula, Nestor Guijarro Carratala, Yongpeng Liu, Feiping Zhao
Andras Kis, Dumitru Dumcenco, Olivier Renault, Dmitrii Unuchek, Hokwon Kim, Nicolas Chevalier