Publication

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Romuald Houdré, Marc Ilegems, Ursula Oesterle
2000
Conference paper

Abstract

We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.

Official source

https://infoscience.epfl.ch/record/111153?ln=en

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Graph Chatbot

Chat with Graph Search

Cavitation induced by pulsed and continuous-wave fiber lasers in confinement

Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Cavitation induced by pulsed and continuous-wave fiber lasers in confinement