Publication

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Romuald Houdré, Marc Ilegems, Ursula Oesterle
2000
Conference paper

Abstract

We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.

Official source

https://infoscience.epfl.ch/record/111153?ln=en

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Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

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