InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion
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A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
Group-III nitride quantum dots (QDs) are grown by molecular beam epitaxy. GaN/AIN QDs are used as a prototypical system for studying the interplay of the carrier localization and the built-in polarization field. The latter effect pushes the QD photolumines ...
