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Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth.
Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Mahdi Zamani, Vladimir Dubrovskii, Sara Marti Sanchez