Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates
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The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreement with ...
We present a correlation between the behaviour of the RHEED specular reflected beam intensity during the initial phases of growth, the MBE growth conditions (T(s), P(As4), V(GaAs)), and the surface morphology examined by Nomarski contrast microscopy after ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
Room‐temperature photoreflectance (PR) measurements have been used to investigate the optical transition energies in InxGa1−xAs/GaAs strained layer superlattice structures grown by molecular‐beam epitaxy (MBE). Sharp PR features indicating excellent optica ...
